An ultra-low power integrated T/R module for space-based radar technology
Hooman Kazemi - Rockwell Scientific Company, Jonathan Hacker - Rockwell Scientific Company, H Xin - Rockwell Scientific Company, Michael Grace - Toyon Research Corporation, Bill Norvell - Consultant, Kevin Higgins - Toyon Research Corporation, Michael Gilbert - Toyon Research Corporation
Tue, 27 April 2004, 8:40 AM - 9:30 AM
Abstract?The choice of InP HEMT technology is discussed for a highly efficient integrated T/R module. The module includes a receive path comprising of a low noise amplifier, phase shifter and amplifier consuming only 5mW of DC power at X-band. The transmit path combines phase shifters and amplifiers to provide 10mW of power per module at an efficiency of 50%. This is achieved by increasing the Cut-off frequency of InP HEMT devices and sacrificing their gain for lower DC power consumption. This provides both DC and PF performance criteria for the space based radar antenna design requirements. Future T/R module technologies are also discussed based on the Antimonide based material system which have already shown a factor of 3-4 reduction in DC power consumption compared to InP HEMT technology.
Dr. Hooman Kazemi - Rockwell Scientific Company
Dr. H. Kazemi received the BEng, MSc. and PhD degree in electronics from Microwave and Terahertz group at University of Leeds, UK. In 1997, he joined the Terahertz Group at the University of Bath, UK., as a postdoctoral research officer designing and fabricating the first micro-machined monolithic terahertz waveguide detector on GaAs at 200GHz, 600GHz and 1.2THz. In 1999, his latter work continued when he joined the University of Virginia (EE) as research associate designing novel millimeter-wave circuits using Sub-millimeter wave GaAs Schottky Diode for delivery to space customers. Dr. Kazemi joined Rockwell Scientific Company in 2001 and has been the program manager for millimeter wave technology components such as W-band low noise and power amplifier design, fabrication and test for MMIC delivery to technology program customers. He has led the development of design and fabrication of high performance, high yield, planar airbridged Schottky diodes with cut-off frequencies in excess of 3.5 THz. The low loss Schottky diodes are as used as electromagnetic crystals (EMXT) for novel electronically scanned antenna applications.